CG2H40045 Description
The CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40045 ideal for linear and pressed amplifier circuits.
CG2H40045 Key Features
- Up to 4 GHz Operation
- 18 dB Small Signal Gain at 2.0 GHz
- 14 dB Small Signal Gain at 4.0 GHz
- 55 W Typical PSAT
- 60% Efficiency at PSAT
- 28 V Operation
CG2H40045 Applications
- Up to 4 GHz Operation