| Part Number | CG2H40045 Datasheet |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| Overview |
The CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety o.
* Up to 4 GHz Operation * 18 dB Small Signal Gain at 2.0 GHz * 14 dB Small Signal Gain at 4.0 GHz * 55 W Typical PSAT * 60% Efficiency at PSAT * 28 V Operation Applications * 2-Way Private Radio * Broadband Amplifiers * Cellular Infrastructure * Test Instrumentation * Class A, AB, Linear amplifiers. |
CG2H40045 Datasheet and Specifications PDF
The CG2H40045 is a RF Power GaN HEMT.
Key Specifications
| Part Number | CG2H40045 Datasheet |
|---|---|
| Description | RF Power GaN HEMT |
| Manufacturer | Cree |
| Overview |
CG2H40045
45 W, DC - 4 GHz RF Power GaN HEMT
Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt rail, offers a ge.
* Up to 4 GHz Operation * 18 dB Small Signal Gain at 2.0 GHz * 14 dB Small Signal Gain at 4.0 GHz * 55 W Typical PSAT * 60 % Efficiency at PSAT * 28 V Operation APPLICATIONS * 2-Way Private Radio * Broadband Amplifiers * Cellular Infrastructure * Test Instrumentation * Class A, AB, Linea. |