• Part: CGHV27030S
  • Description: GaN HEMT
  • Manufacturer: Cree
  • Size: 2.63 MB
Download CGHV27030S Datasheet PDF
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Datasheet Summary

30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devicesare ideal for telemunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V CGHV27030S is also ideal for tactical munications and 28 V operations. applications operating The from 20-25P0a0ckaPgNe :TyCpGeH:V32x740D30FSN MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or...