| Part Number | CGHV27030S Datasheet |
|---|---|
| Manufacturer | Cree |
| Overview |
RES, 22.6, OHM, +/-1%, 1/16W, 0603 CAP, 3.3 pF, ±0.1 pF, 0603, ATC CAP, 0.7 pF, ±0.05 pF, 0603, ATC CAP, 8.2 pF, ±0.25 pF, 0603, ATC CAP, 470 pF, 5%, 100 V, 0603 CAP, 33000 pF, 0805, 100 V, 0603, X7R .
for 50 V in CGHV27030S-TB1
* 2.5 - 2.7 GHz Operation * 30 W Typical Output Power * 21 dB Gain at 5 W PAVE * -36 dBc ACLR at 5 W PAVE * 32% efficiency at 5 W PAVE * High degree of APD and DPD correction can be applied Listing of Available Hardware Application Circuits / Demonstration Circuits Applic. |
CGHV27030S Datasheet and Specifications PDF
The CGHV27030S is a GaN HEMT.
| Part Number | CGHV27030S Datasheet |
|---|---|
| Description | GaN HEMT |
| Manufacturer | MACOM Technology Solutions |
| Overview |
The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices .
for 50 V in CGHV27030S-AMP1
* 2.5 - 2.7 GHz Operation * 30 W Typical Output Power * 20 dB Gain at 5 W PAVE * -34 dBc ACLR at 5 W PAVE * 30% efficiency at 5 W PAVE * High degree of APD and DPD correction can be applied Listing of Available Hardware Application Circuits / Demonstration Circuits Ap. |