CGHV27030S Description
The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S is also ideal for tactical munications applications operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR.
CGHV27030S Key Features
- 2.7 GHz Operation
- 30 W Typical Output Power
- 20 dB Gain at 5 W PAVE
- 34 dBc ACLR at 5 W PAVE
- 30% efficiency at 5 W PAVE
- High degree of APD and DPD correction can be applied
- 2.7 GHz
- 2.2 GHz 1.2
- 1.4 GHz