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CGHV27030S - GaN HEMT

General Description

The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities.

Key Features

  • for 50 V in CGHV27030S-AMP1.
  • 2.5 - 2.7 GHz Operation.
  • 30 W Typical Output Power.
  • 20 dB Gain at 5 W PAVE.
  • -34 dBc ACLR at 5 W PAVE.
  • 30% efficiency at 5 W PAVE.
  • High degree of APD and DPD correction can be applied Listing of Available Hardware.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT Description The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.