Description
The CT816 series consists of a photo transistor optically coupled to a gallium arsenide Infraredemitting diode in a 4-lead DIP package with bending options.
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schem
Features
- High isolation 5000 VRMS.
- CTR flexibility available see order information.
- DC input with transistor output.
- External Creepage ≥ 7.4mm.
- Distance Through Isolation ≥ 0.4mm.
- Spatial Distance ≥ 7.5mm (S/SL Type).
- Spatial Distance ≥ 8.0mm (M/SLM Type).
- Operating Temperature range - 55 °C to 110 °C.
- Regulatory Approvals.
- UL - UL1577 (E364000).
- VDE - EN60747-5-5(VDE0884-5).
- CQC.
- GB4943.1, GB8898.
- IEC60065, IEC60950.
CT816 Datasheet
