CT816 Overview
Description
The CT816 series consists of a photo transistor optically coupled to a gallium arsenide Infraredemitting diode in a 4-lead DIP package with bending options.
Key Features
- High isolation 5000 VRMS
- CTR flexibility available see order information
- DC input with transistor output
- External Creepage ≥ 7.4mm
- Distance Through Isolation ≥ 0.4mm
- Spatial Distance ≥ 7.5mm (S/SL Type)
- Spatial Distance ≥ 8.0mm (M/SLM Type)
- Operating Temperature range
- 55 °C to 110 °C
- Regulatory Approvals
