CXW 3401
P-Channel MOSFET
GENERAL FEATURES
● RDS(ON) < Ω @ RDS(ON) < Ω @● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
● PWM applications
● Load switch
● Power management 3401 DATASHEET 3424
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS IDM ID Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current① Pulse Drain Current Tested① Continuous Drain Current(VGS=-10V) ① TC =25°C TC =25°C TC =25°C Rating ±12 -30 175 -50 to 150 -4.2 -16 -4.2 Unit V V °C °C A A A 1 P-channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) 3401 DATASHEET 3424 Parameter OFF CHARACTERISTICS Drain‐Source Breakdown Voltage Zero Gate Voltage Drain Current Gate‐Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain‐Source On‐State Resistance DYNA...