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3401
RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP
P MOS
1
SOT-23
D
Drain
D
3
k 1
2
e G
S
T Top View
e (TA=25℃,)
rc
u 1)
o
TA=25℃ TA=75℃
S (PCB )
Chip ::
Gate
C
VDS ID IDM
PD
TJ, Tstg RθJA
Sou r ce
P-Channel MOSFET
-18 -3.5 -20 1.4
1 -55~150
140
V A
W ℃ ℃/W
B
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A
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3401
P MOS
RDS(on) RDS(on)
VGS = -4.5V, ID = -1.0A VGS = -2.5V, ID = -0.5A
--
48.0
65.0
mΩ
--
75.0 100.0
VGS(th)
VDS = VGS, ID = -250uA
-0.5
-0.95 -1.