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MTB030P06KH8 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.5V, ID=-4A.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • ESD protected gate.
  • RoHS compliant package RDS(ON)@VGS=-4V, ID=-3A -60V -34A -5.9A 21.4 mΩ(typ) 35.6 mΩ(typ) 42.6 mΩ(typ) Symbol MTB030P06KH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB030P06KH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free.

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Datasheet Details

Part number MTB030P06KH8
Manufacturer CYStech Electronics
File Size 569.58 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB030P06KH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C104H8 Issued Date : 2016.04.29 Revised Date : Page No. : 1/10 P-Channel Enhancement Mode Power MOSFET MTB030P06KH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.5V, ID=-4A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • RoHS compliant package RDS(ON)@VGS=-4V, ID=-3A -60V -34A -5.9A 21.4 mΩ(typ) 35.6 mΩ(typ) 42.