Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C104H8 Issued Date : 2016.04.29 Revised Date : Page No. : 1/10
P-Channel Enhancement Mode Power MOSFET
MTB030P06KH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.5V, ID=-4A
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- ESD protected gate
- RoHS pliant package
RDS(ON)@VGS=-4V, ID=-3A
-60V -34A
-5.9A 21.4 mΩ(typ) 35.6 mΩ(typ) 42.6 mΩ(typ)
Symbol
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device MTB030P06KH8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs /...