MTB030P06KH8 Description
CYStech Electronics Corp. 2016.04.29 Revised Date : 1/10 P-Channel Enhancement Mode Power MOSFET MTB030P06KH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C.
MTB030P06KH8 Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- ESD protected gate
- RoHS pliant package
- 60V -34A
- 5.9A 21.4 mΩ(typ) 35.6 mΩ(typ) 42.6 mΩ(typ)