MTB030P06KH8 Datasheet P-channel Enhancement Mode Power MOSFET

Manufacturer: CYStech Electronics

Overview: CYStech Electronics Corp. Spec. No. : C104H8 Issued Date : 2016.04.29 Revised Date : Page No.

Datasheet Details

Part number	MTB030P06KH8
Manufacturer	CYStech Electronics
File Size	569.58 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTB030P06KH8-CYStechElectronics.pdf

Key Features

RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.5V, ID=-4A.
Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
ESD protected gate.
RoHS compliant package RDS(ON)@VGS=-4V, ID=-3A -60V -34A -5.9A 21.4 mΩ(typ) 35.6 mΩ(typ) 42.6 mΩ(typ) Symbol MTB030P06KH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB030P06KH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free.

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