• Part: MTB035N10KRJ3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: CYStech Electronics
  • Size: 369.87 KB
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Datasheet Summary

CYStech Electronics Corp. Product Summary BVDSS RDS(ON) typ. @ VGS=10V, ID=2A RDS(ON) typ. @ VGS=4.5V, ID=2A ID @ VGS=10V, TC=25°C ID @ VGS=10V, TA=25°C TO-252 N-Channel Enhancement Mode Power MOSFET 32 mΩ 19 A Features - Low Gate Charge - Fast Switching Characteristic - Pb-free lead plating and halogen-free - ESD protected gate Marking B035N 10KR YMXX Device Code Date Code Ordering Information Device MTB035N10KRJ3-0-T3-G Package Shipping TO-252 2500pcs / Tape & Reel 0: Product rank, zero for no rank products. T3: Packing spec, T3 : 2500pcs / tape & reel, 13” reel G: Environment friendly grade: S for RoHS pliant products, G for RoHS pliant and...