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MTB035N10KRJ3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free.
  • ESD protected gate Marking B035N 10KR YMXX Device Code Date Code Ordering Information Device MTB035N10KRJ3-0-T3-G Package Shipping TO-252 2500pcs / Tape & Reel 0: Product rank, zero for no rank products. T3: Packing spec, T3 : 2500pcs / tape & reel, 13” reel G: Environment friendly grade: S for RoHS compliant products, G for RoHS compliant and green compound products.

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Datasheet Details

Part number MTB035N10KRJ3
Manufacturer CYStech Electronics
File Size 369.87 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB035N10KRJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Product Summary BVDSS RDS(ON) typ. @ VGS=10V, ID=2A RDS(ON) typ. @ VGS=4.5V, ID=2A ID @ VGS=10V, TC=25°C ID @ VGS=10V, TA=25°C TO-252 MTB035N10KRJ3 N-Channel Enhancement Mode Power MOSFET 100 V 32 mΩ 42 19 A 5.7 Features • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free • ESD protected gate Marking B035N 10KR YMXX Device Code Date Code Ordering Information Device MTB035N10KRJ3-0-T3-G Package Shipping TO-252 2500pcs / Tape & Reel 0: Product rank, zero for no rank products. T3: Packing spec, T3 : 2500pcs / tape & reel, 13” reel G: Environment friendly grade: S for RoHS compliant products, G for RoHS compliant and green compound products.