MTB035N10KRJ3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: CYStech Electronics

Overview: CYStech Electronics Corp. Product Summary BVDSS RDS(ON) typ. @ VGS=10V, ID=2A RDS(ON) typ. @ VGS=4.5V, ID=2A ID @ VGS=10V, TC=25°C ID @ VGS=10V, TA=25°C TO-252 MTB035N10KRJ3 N-Channel Enhancement Mode Power MOSFET 100 V 32 mΩ 42 19 A 5.

Datasheet Details

Part number	MTB035N10KRJ3
Manufacturer	CYStech Electronics
File Size	369.87 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB035N10KRJ3-CYStechElectronics.pdf

Key Features

Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and halogen-free.
ESD protected gate Marking B035N 10KR YMXX Device Code Date Code Ordering Information Device MTB035N10KRJ3-0-T3-G Package Shipping TO-252 2500pcs / Tape & Reel 0: Product rank, zero for no rank products. T3: Packing spec, T3 : 2500pcs / tape & reel, 13” reel G: Environment friendly grade: S for RoHS compliant products, G for RoHS compliant and green compound products.

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