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MTNK3S3 Datasheet ESD protected N-CHANNEL MOSFET

Manufacturer: CYStech Electronics

Datasheet Details

Part number MTNK3S3
Manufacturer CYStech Electronics
File Size 310.78 KB
Description ESD protected N-CHANNEL MOSFET
Download MTNK3S3 Download (PDF)

General Description

• Low voltage drive, 1.8V • Easy to use in parallel • High speed switching • ESD protected device • Pb-free package BVDSS ID RDSON 20V 100mA 3Ω Symbol MTNK3S3 Outline SOT-323 D G:Gate S:Source D:Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Ta=25°C) Total Power Dissipation (Ta=25°C) Total Power Dissipation (Tc=25°C) ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Lead Temperature, for 10 second Soldering Note : *1.

Pulse Width ≤ 300μs, Duty cycle ≤2% *2.

Human body model, 1.5kΩ in series with 100pF MTNK3S3 CYStek Product Specification http://www.Datasheet4U.com Symbol BVDSS VGS ID IDM PD Tj Rth,ja Rth,jc TL Limits 20 ±8 100 400 *1 200 400 350 *2 -55~+150 625 250 260 Unit V V mA mA mW V °C °C/W °C/W °C CYStech Electronics Corp.

Overview

CYStech Electronics Corp.

ESD protected N-CHANNEL MOSFET Spec.

No.