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MTNK3S3 - ESD protected N-CHANNEL MOSFET

Description

Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package BVDSS ID RDSON 20V 100mA 3Ω Symbol MTNK3S3 Outline SOT-323 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Dr

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Datasheet Details

Part number MTNK3S3
Manufacturer CYStech Electronics
File Size 310.78 KB
Description ESD protected N-CHANNEL MOSFET
Datasheet download datasheet MTNK3S3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. ESD protected N-CHANNEL MOSFET Spec. No. : C447S3 Issued Date : 2009.04.29 Revised Date : 2010.06.18 Page No. : 1/6 MTNK3S3 Description • Low voltage drive, 1.8V • Easy to use in parallel • High speed switching • ESD protected device • Pb-free package BVDSS ID RDSON 20V 100mA 3Ω Symbol MTNK3S3 Outline SOT-323 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Ta=25°C) Total Power Dissipation (Ta=25°C) Total Power Dissipation (Tc=25°C) ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Lead Temperature, for 10 second Soldering Note : *1.
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