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CYStech Electronics Corp.
ESD protected N-CHANNEL MOSFET
Spec. No. : C447W3 Issued Date : 2010.07.26 Revised Date : Page No. : 1/6
MTNK3W3
Description
• Low voltage drive, 1.8V • Easy to use in parallel • High speed switching • ESD protected device • Pb-free package
BVDSS ID RDSON
20V 100mA 3Ω
Symbol
MTNK3W3
Outline
SOT-923
D S
G G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%. *2. When device mounted on recommended land pattern. *3. Human body model, 1.5kΩ in series with 100pF.
MTNK3W3 Datasheet
