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MTNN18N03Q8 - N-Channel MOSFET

Description

The MTNN18N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Two N-ch MOSFETs in a package.
  • Pb-free lead plating package Equivalent Circuit MTNN18N03Q8 Outline SOP-8 G：Gate S：Source D：Drain MTNN18N03Q8 CYStek Product Specification http://www. Datasheet4U. com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25 °C (Note 1) Continuous Drain Current @.

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Datasheet Details

Part number MTNN18N03Q8
Manufacturer CYStech Electronics
File Size 721.53 KB
Description N-Channel MOSFET
Datasheet download datasheet MTNN18N03Q8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Spec. No. : C806Q8 Issued Date : 2009.12.30 Revised Date : 2011.03.21 Page No. : 1/9 MTNN18N03Q8 Description BVDSS ID RDSON(MAX) N-CH 1 30V 10A 18mΩ N-CH 2 60V 0.115A 5Ω The MTNN18N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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