Datasheet Summary
CYStech Electronics Corp.
Asymmetric Dual N-Channel Enhancement Mode MOSFET
Spec. No. : C560Q8 Issued Date : 2012.04.30 Revised Date : Page No. : 1/12
Description
BVDSS ID RDSON(TYP.)@VGS=10V RDSON(TYP.)@VGS=4.5V
FET1 30V 6.8A 15mΩ 23mΩ
FET 2 30V 8.9A 15mΩ 23mΩ
The MTNN8453KQ8 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DC-DC converters. A Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. The SOP-8 package is universally preferred for all mercial-industrial surface mount applications.
Features
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