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BTC2383K3 - NPN Transistor

Key Features

  • High breakdown voltage , BVCEO=160V.
  • Low Saturation Voltage, VCE(sat)=0.2V(typ)@IC=500mA, IB=50mA.
  • Complementary to BTA1013K3.
  • Pb-free lead plating and halogen-free package Symbol BTC2383K3 Outline TO-92L B:Base C:Collector E:Emitter Ordering Information Device BTC2383K3-0-TB-G BTC2383K3-0-BM-G Package TO-92L (Pb-free lead plating and halogen-free package) TO-92L (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / tape & box 500 pcs / b.

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Datasheet Details

Part number BTC2383K3
Manufacturer CYStech
File Size 319.38 KB
Description NPN Transistor
Datasheet download datasheet BTC2383K3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C625K3 Issued Date : 2014.04.17 Revised Date : Page No. : 1/8 NPN Epitaxial Planar Transistor BTC2383K3 BVCEO IC RCESAT(MAX) 160V 1A 1Ω Features • High breakdown voltage , BVCEO=160V • Low Saturation Voltage, VCE(sat)=0.