BTC2655K3 Description
CYStech Electronics Corp. 2011.12.21 Revised Date :2013.12.25 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTC2655K3 BVCEO IC RCESAT(max) 60V 2A 300mΩ.
BTC2655K3 Key Features
- High breakdown voltage, BVCEO≥ 60V
- Large continuous collector current capability
- Low collector saturation voltage
- Pb-free lead plating package