BTC2655S3 Description
CYStech Electronics Corp. 2012.04.12 Revised Date : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2655S3 BVCEO IC RCESAT(max) 50V 2A 300mΩ.
BTC2655S3 Key Features
- High breakdown voltage, BVCEO≥ 50V
- Large continuous collector current capability
- Low collector saturation voltage
- Pb-free lead plating package