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BTC2881E3 Datasheet Silicon NPN Epitaxial Planar Transistor

Manufacturer: CYStech

Overview: CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTC2881E3 BVCEO IC RCESAT(MAX) Spec. No. : C316E3 Issued Date : 2010.01.22 Revised Date : 2010.09.28 Page No. : 1/5 200V 1A 0.

Datasheet Details

Part number BTC2881E3
Manufacturer CYStech
File Size 190.93 KB
Description Silicon NPN Epitaxial Planar Transistor
Datasheet BTC2881E3-CYStech.pdf

General Description

• High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability • Low collector saturation voltage • RoHS pliant package Symbol BTC2881E3 Outline TO-220 B:Base C:Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junction Temperature and Storage Temperature Range Symbol VCBO VCEO VEBO IC IB PD Tj ;

Tstg Limits 300 200 6 1 0.2 2 20 -55~+150 Unit V V V A A W W °C BTC2881E3 CYStek Product Specification CYStech Electronics Corp.

Spec.

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