BTC2881J3 Description
CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2881J3 BVCEO IC Spec. 2009.11.17 Revised Date.
BTC2881J3 Key Features
- High breakdown voltage, BVCEO≥ 200V
- Large continuous collector current capability
- Low collector saturation voltage
- Pb-free lead plating and halogen-free package