BTC2881M3 Description
CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2881M3 BVCEO IC RCESAT(MAX) Spec. 2007.03.28 Revised Date.
BTC2881M3 Key Features
- High breakdown voltage, BVCEO≥ 200V
- Large continuous collector current capability
- Low collector saturation voltage
- plementary to BTA1201M3
- Pb-free lead plating and halogen-free package