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BTD1768S3 - General Purpose NPN Epitaxial Planar Transistor

General Description

The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose application.

Key Features

  • Low collector saturation voltage.
  • High breakdown voltage, VCEO=80V (min. ).
  • High collector current, IC(max)=1A (DC).
  • Pb-free package Symbol BTD1768S3 Outline SOT-323 B:Base C:Collector E:Emitter Ordering Information Device BTD1768S3-X-T1-G Package SOT-323 (Pb-free and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pc.

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Datasheet Details

Part number BTD1768S3
Manufacturer CYStech
File Size 281.56 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD1768S3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C304S3 Issued Date : 2009.11.19 Revised Date : 2017.06.09 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768S3 BVCEO IC 80V 1A Description The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.