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BTD1782N3 Datasheet General Purpose NPN Epitaxial Planar Transistor

Manufacturer: CYStech

Overview: CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1782N3 Spec. No. : C304N3 Issued Date : 2006.06.12 Revised Date : 2007.12.11 Page No.

Datasheet Details

Part number BTD1782N3
Manufacturer CYStech
File Size 185.32 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet BTD1782N3-CYStech.pdf

General Description

The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose application.

Key Features

  • Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA.
  • High breakdown voltage, VCEO=80V (min. ).
  • Complements to BTB1198N3.
  • Pb-free package Symbol BTD1782N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO.

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