BTD1782N3 - General Purpose NPN Epitaxial Planar Transistor

Product Overview

CYStech

Part number	BTD1782N3
Manufacturer	CYStech
File Size	185.32 KB
Description	General Purpose NPN Epitaxial Planar Transistor
Datasheet	BTD1782N3 Datasheet
Additional preview pages of the BTD1782N3 datasheet.

The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose application.

Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA.
High breakdown voltage, VCEO=80V (min. ).
Complements to BTB1198N3.
Pb-free package Symbol BTD1782N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO.

📁 Similar Datasheet

Other Datasheets by CYStech

Published: Jan 17, 2020 |