High BVCEO
High current capability
Pb-free package
Symbol
BTD1858A3
Outline
TO-92
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Curren
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CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1858A3
Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 1/9
Description
• High BVCEO • High current capability • Pb-free package
Symbol
BTD1858A3
Outline
TO-92
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃
Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PD Tj Tstg
BTD1858A3
ECB
Limits
180 180 5 1.5
3 750 150 -55~+150
Unit
V V V A A mW
°C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No.
BTD1858A3 Datasheet
