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BTD1858T3 - Silicon NPN Epitaxial Planar Transistor

General Description

High BVCEO High current capability Pb-free package Symbol BTD1858T3 Outline TO-126 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector C

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Datasheet Details

Part number BTD1858T3
Manufacturer CYStech
File Size 173.69 KB
Description Silicon NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD1858T3 Datasheet

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1858T3 Spec. No. : C856T3 Issued Date : 2007.03.20 Revised Date : Page No. : 1/7 Description • High BVCEO • High current capability • Pb-free package Symbol BTD1858T3 Outline TO-126 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse , Pw≦380μs,Duty≦2%. BTD1858T3 Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 180 180 5 1.5 3 (Note) 1 15 125 8.