BTD6055J3 Description
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD6055J3 Spec. 2008.06.25 Revised Date.
BTD6055J3 Key Features
- Low VCE(SAT)
- Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A
- Low operating collector voltage
- Excellent current gain characteristics at very low VCE
- Suitable for low dropout voltage application
- Pb-free package