BTD6055M3 Description
CYStech Electronics Corp. 2008.06.25 Revised Date : 1/6 NPN Epitaxial Planar High Current (High Performance) Transistor BTD6055M3.
BTD6055M3 Key Features
- Low VCE(SAT)
- Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A
- Low operating collector voltage
- Excellent current gain characteristics at very low VCE
- Suitable for low dropout voltage application
- Pb-free package