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BTD882NUT3 - Low Vcesat NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), 0.2V typ. at IC / IB = 2A / 0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB772NUT3.
  • Pb-free lead plating and halogen-free package Symbol BTD882NUT3 Outline TO-126 B:Base C:Collector E:Emitter ECB Ordering Information Device BTD882NUT3-X-BL-X Package TO-126 (Pb-free lead plating package) Shipping 200 pcs / bag, 3,000 pcs/box , 30,000 pcs/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compli.

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Datasheet Details

Part number BTD882NUT3
Manufacturer CYStech
File Size 295.26 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD882NUT3 Datasheet

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CYStech Electronics Corp. BTD882NUT3Low Vcesat NPN Epitaxial Planar Transistor BVCEO IC Spec. No. : C630T3 Issued Date : 2017.03.22 Revised Date : 2017.04.18 Page No. : 1/6 30V 3A Features • Low VCE(sat), 0.2V typ. at IC / IB = 2A / 0.