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BTD882ST3 - Low Vcesat NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB772ST3.
  • Pb-free lead plating package Symbol BTD882ST3 Outline TO-126 B：Base C：Collector E：Emitter ECB Ordering Information Device BTD882ST3-X-BL-X Package TO-126 (Pb-free lead plating package) Shipping 200 pcs / bag, 3,000 pcs/box , 30,000 pcs/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Pac.

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Datasheet Details

Part number BTD882ST3
Manufacturer CYStech
File Size 409.82 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD882ST3 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882ST3 BVCEO IC RCESAT(typ) Spec. No. : C858T3 Issued Date : 2011.06.28 Revised Date : 2016.01.12 Page No. : 1/7 30V 3A 150mΩ Features  Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.