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BTN853L3 - Low Vcesat NPN Epitaxial Planar Transistor

Key Features

  • Extremely low equivalent on resistance; RCE(SAT)≤ 60mΩ at 5.2A.
  • 5.2A continuous collector current (10.4A peak).
  • Very low saturation voltages.
  • Excellent gain characteristics.
  • Pb-free lead plating and halogen-free package Symbol BTN853L3 B：Base C：Collector E：Emitter Outline SOT-223 C E C B Ordering Information Device BTN853L3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment frie.

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Datasheet Details

Part number BTN853L3
Manufacturer CYStech
File Size 294.62 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN853L3 Datasheet

Full PDF Text Transcription for BTN853L3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BTN853L3. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C821L3 Issued Date : 2010.02.05 Revised Date : 2017.08.21 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BTN853L3 BVCEO I...

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No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BTN853L3 BVCEO ID RCESAT(max) 60V 5.2A 55mΩ Features • Extremely low equivalent on resistance; RCE(SAT)≤ 60mΩ at 5.2A • 5.2A continuous collector current (10.

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