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BTNA45A3 - NPN High Voltage Planar Transistor

Description

High breakdown voltage.

Low collector-emitter saturation voltage VCESAT.

High collector current capability IC and ICM.

High collector current gain HFE at high collector current IC.

Low collector output capacitance.

(Typ.

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Datasheet Details

Part number BTNA45A3
Manufacturer CYStech
File Size 265.27 KB
Description NPN High Voltage Planar Transistor
Datasheet download datasheet BTNA45A3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. NPN High Voltage Planar Transistor BTNA45A3 BVCEO IC VCESAT Spec. No. : C241A3 Issued Date : 2011.06.10 Revised Date : 2013.11.22 Page No. : 1/7 500V 150mA 150mV (max) Description • High breakdown voltage. (BVCEO=500V) • Low collector-emitter saturation voltage VCESAT. • High collector current capability IC and ICM. • High collector current gain HFE at high collector current IC. • Low collector output capacitance. (Typ. 5pF at VCB =20V) • Pb-free lead plating and halogen-free package.
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