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D44H11J3 - Low Vcesat NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat).
  • High BVCEO.
  • Excellent current gain characteristics.
  • RoHS compliant package BVCEO IC RCESAT Spec. No. : C606J3-A Issued Date : 2005.08.15 Revised Date :2010.12.08 Page No. : 1/7 80V 8A 60mΩ Symbol D44H11J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Di.

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Datasheet Details

Part number D44H11J3
Manufacturer CYStech
File Size 298.78 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet D44H11J3 Datasheet

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor D44H11J3 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package BVCEO IC RCESAT Spec. No. : C606J3-A Issued Date : 2005.08.15 Revised Date :2010.12.08 Page No. : 1/7 80V 8A 60mΩ Symbol D44H11J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Note : 1.