MTB040P04N3 Datasheet | CYStech

CYStech Electronics Corp. Spec. No. : C967N3 Issued Date : 2017.11.02 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS ID@TA=25C, VGS=-10V RDSON@VGS=-10V, ID=-2.5A RDSON@VGS=-4.5V, ID=-2A -40V -3.2A 47mΩ (typ.) 57mΩ (typ.) Features - Advanced trench process technology - Super high density cell design for extremely low on resistance - Reliable and rugged - pact and low profile SOT-23 package - Pb-free lead plating and halogen-free package Equivalent Circuit Outline SOT-23 D G：Gate S：Source D：Drain Ordering Information Device MTB040P04N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs...