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MTB040P04N3 - P-Channel Power MOSFET

Key Features

  • Advanced trench process technology.
  • Super high density cell design for extremely low on resistance.
  • Reliable and rugged.
  • Compact and low profile SOT-23 package.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB040P04N3 Outline SOT-23 D G:Gate S:Source D:Drain S G Ordering Information Device MTB040P04N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendl.

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Datasheet Details

Part number MTB040P04N3
Manufacturer CYStech
File Size 653.40 KB
Description P-Channel Power MOSFET
Datasheet download datasheet MTB040P04N3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C967N3 Issued Date : 2017.11.02 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET MTB040P04N3 BVDSS ID@TA=25C, VGS=-10V RDSON@VGS=-10V, ID=-2.5A RDSON@VGS=-4.5V, ID=-2A -40V -3.2A 47mΩ (typ.) 57mΩ (typ.