• Part: MTB070N11J3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: CYStech
  • Size: 312.31 KB
Download MTB070N11J3 Datasheet PDF
MTB070N11J3 page 2
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Datasheet Summary

CYStech Electronics Corp. Spec. No. : C932J3 Issued Date : 2013.10.30 Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTB070N11J3 BVDSS ID RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.5V, ID=10A 110V 15A 82 mΩ(typ) 81 mΩ(typ) Features - Low on resistance - Simple drive requirement - Low gate charge - Fast switching characteristic - Pb-free plead plating and halogen-free package Symbol Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB070N11J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS pliant products, G for...