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MTB080N15J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080N15J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB080N15J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel.

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Datasheet Details

Part number MTB080N15J3
Manufacturer CYStech
File Size 344.45 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB080N15J3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C987J3 Issued Date : 2015.02.03 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB080N15J3 BVDSS 150V ID @VGS=10V, TC=25°C 18A RDS(ON)@VGS=10V, ID=10A 82.3mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 85.