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MTBA6C12J4 - N & P-Channel Enhancement Mode Power MOSFET

Key Features

  • RDSON(typ. ) @VGS=(-)4.5V.
  • Low Gate Charge.
  • Simple Drive Requirement.
  • RoHS compliant & Halogen-free package N-CH 120V 2A 176 mΩ 183 mΩ P-CH -120V -1.6A 246 mΩ 276 mΩ Equivalent Circuit MTBA6C12J4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Voltage VDS 120 -120 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current @ TC=25°C, VGS=10V(-10.

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Datasheet Details

Part number MTBA6C12J4
Manufacturer CYStech
File Size 365.70 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA6C12J4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET MTBA6C12J4 BVDSS ID @ VGS=10V(-10V) RDSON(typ.) @VGS=(-)10V Features RDSON(typ.) @VGS=(-)4.5V • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package N-CH 120V 2A 176 mΩ 183 mΩ P-CH -120V -1.6A 246 mΩ 276 mΩ Equivalent Circuit MTBA6C12J4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Voltage VDS 120 -120 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1) 8.0 -6.