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MTBA5A10Q8 - Dual N-Channel Enhancement Mode Power MOSFET

General Description

The MTBA5A10Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness.

The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.

Key Features

  • RDS(ON)=150mΩ(max. )@VGS=10V, ID=2.5A.
  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Dual N-ch MOSFET package.
  • Pb-free lead plating & Halogen-free package Equivalent Circuit MTBA5A10Q8 Outline SOP-8 G:Gate S:Source D:Drain MTBA5A10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Paramet.

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Datasheet Details

Part number MTBA5A10Q8
Manufacturer CYStech
File Size 312.79 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA5A10Q8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 1/8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET MTBA5A10Q8 BVDSS 100V ID 3A RDSON(MAX) 150mΩ Description The MTBA5A10Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features • RDS(ON)=150mΩ(max.)@VGS=10V, ID=2.