Description
The MTBA5N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
- Low On Resistance.
- Simple Drive Requirement.
- Low Gate Charge.
- Fast Switching Characteristic.
- Insulating package, front/back side insulating voltage=2500V(AC).
- RoHS compliant package
Symbol
MTBA5N10FP
Outline
TO-220FP
G：Gate D：Drain S：Source
MTBA5N10FP
GDS
CYStek Product Specification
CYStech Electronics Corp. Spec. No. : C731FP Issued Date : 2012.12.06 Revised Date : Page No. : 2/ 10
Absolute Maximum Ratings (TC=25°C)
Parameter
Dra.
MTBA5N10FP Datasheet
