Description
The MTBA5N10V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
- Single Drive Requirement.
- Low On-resistance.
- Fast Switching Characteristic.
- Dynamic dv/dt rating.
- Repetitive Avalanche Rated.
- Pb-free lead plating and Halogen-free package
Equivalent Circuit
MTBA5N10V8
Outline
Pin 1
DFN3×3
G：Gate D：Drain S：Source
Ordering Information
Device MTBA5N10V8-0-T1-G
Package
DFN3×3 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
MTBA5N10V8
CYStek Product Specification
CYStech.
MTBA5N10V8 Datasheet
