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CYStech Electronics Corp.
Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7
N -Channel Logic Level Enhancement Mode Power MOSFET
MTBA5N10J3
BVDSS
100V
ID 10A
Features
• Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package
RDSON(MAX)
150mΩ
Equivalent Circuit
MTBA5N10J3
Outline
TO-252
G：Gate D：Drain S：Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω Repetitive Avalanche Energy @ L=0.
MTBA5N10J3 Datasheet
