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MTBA5N10Q8 - N-Channel Enhancement Mode Power MOSFET

General Description

The MTBA5N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating package Symbol MTBA5N10Q8 Outline Pin 1 SOP-8 G:Gate D:Drain S:Source MTBA5N10Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=2mH, ID=3A, VGS=10V, VDD=25.

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Datasheet Details

Part number MTBA5N10Q8
Manufacturer CYStech
File Size 257.27 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA5N10Q8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C731Q8 Issued Date : 2013.07.19 Revised Date : Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET MTBA5N10Q8 BVDSS ID RDSON(TYP) VGS=10V, ID=3A VGS=4.5V, ID=2A 100V 3A 123mΩ 130mΩ Description The MTBA5N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Symbol MTBA5N10Q8 Outline Pin 1 SOP-8 G:Gate D:Drain S:Source MTBA5N10Q8 CYStek Product Specification CYStech Electronics Corp.