MTBB0P10AJ3
MTBB0P10AJ3 is P-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
CYStech Electronics Corp.
Spec. No. : C163J3 Issued Date : 2015.05.29 Revised Date : Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTBB0P10AJ3 BVDSS ID@VGS=-10V, TC=25°C
RDSON@VGS=-10V, ID=-4.7A
RDSON@VGS=-6V, ID=-1A
-100V -10A 280mΩ (typ.) 298mΩ (typ.)
Features
- Low Gate Charge
- Simple Drive Requirement
- Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTBB0P10AJ3-0-T3-G
Package
Shipping
TO-252 (Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and green...
