• Part: MTBB5N10L3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: CYStech
  • Size: 432.24 KB
Download MTBB5N10L3 Datasheet PDF
CYStech
MTBB5N10L3
MTBB5N10L3 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
CYStech Electronics Corp. Spec. No. : C593L3 Issued Date : 2010.07.07 Revised Date : 2018.02.09 Page No. : 1/8 N -Channel Logic Level Enhancement Mode MOSFET BVDSS ID @ VGS=10V, TC=25°C RDSON@VGS=10V, ID=5A RDSON@VGS=5V, ID=5A Features RDSON@VGS=4.5V, ID=5A - Low Gate Charge - Simple Drive Requirement - Pb-free lead plating & Halogen-free package 100V 5A 129mΩ (typ.) 134mΩ (typ.) 136mΩ (typ.) Equivalent Circuit G:Gate D:Drain S:Source Outline SOT-223 Ordering Information Device MTBB5N10L3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS pliant...