• Part: MTDN5820Z6
  • Description: Dual N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: CYStech
  • Size: 307.62 KB
Download MTDN5820Z6 Datasheet PDF
CYStech
MTDN5820Z6
MTDN5820Z6 is Dual N-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
CYStech Electronics Corp. Spec. No. : C911Z6 Issued Date : 2013.11.28 Revised Date : Page No. : 1/9 20V mon Drain Dual N -Channel Enhancement Mode MOSFET BVDSS ID VGS=4.5V 20V 11A VGS=4.5V, ID=5.5A 6.0mΩ VGS=4.0V, ID=5.5A 6.0mΩ RDSON (TYP.) VGS=3.7V, ID=5.5A 6.2 mΩ VGS=3.1V, ID=5.5A 6.7 mΩ Description VGS=2.5V, ID=5.5A 7.8 mΩ The MTDN5820Z6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×5-6L package, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TDFN2×5-6L package is universally preferred for all mercial-industrial surface mount...