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MTDN6303S6R - N-CHANNEL MOSFET

Features

  • RDSON@VGS=1.8V, ID=350mA.
  • Low on-resistance.
  • High ESD capability.
  • High speed switching.
  • Low-voltage drive(1.8V).
  • Pb-free lead plating and halogen-free package 20V 760mA 370mΩ(typ) 500mΩ(typ) 1.1Ω (typ) Equivalent Circuit MTDN6303S6R Outline SOT-363 Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.

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Datasheet preview – MTDN6303S6R

Datasheet Details

Part number MTDN6303S6R
Manufacturer CYStech
File Size 324.91 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet MTDN6303S6R Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C814S6R Issued Date : 2012.05.15 Revised Date : 2014.04.15 Page No. : 1/ 8 N-CHANNEL MOSFET (dual transistors) MTDN6303S6R BVDSS ID RDSON@VGS=4.5V, ID=600mA RDSON@VGS=2.5V, ID=400mA Features RDSON@VGS=1.8V, ID=350mA • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(1.8V) • Pb-free lead plating and halogen-free package 20V 760mA 370mΩ(typ) 500mΩ(typ) 1.1Ω (typ) Equivalent Circuit MTDN6303S6R Outline SOT-363 Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=85°C, VGS=4.
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