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MTDN7002ZHS6R - N-CHANNEL MOSFET

Features

  • Low on-resistance.
  • High ESD capability.
  • High speed switching.
  • Low-voltage drive(4V).
  • Easily designed drive circuits.
  • Easy to use in parallel.
  • Pb-free package Equivalent Circuit MTDN7002ZHS6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current Continuous Pulsed ID IDP Drain Re.

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Datasheet Details

Part number MTDN7002ZHS6R
Manufacturer CYStech
File Size 219.12 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet MTDN7002ZHS6R Datasheet
Additional preview pages of the MTDN7002ZHS6R datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. N-CHANNEL MOSFET (dual transistors) MTDN7002ZHS6R Spec. No. : C320S6R Issued Date : 2007.11.07 Revised Date : Page No. : 1/ 7 Features • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Equivalent Circuit MTDN7002ZHS6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current Continuous Pulsed ID IDP Drain Reverse Current Continuous Pulsed IDR IDRP Power Dissipation Pd ESD susceptibility Junction Temperature Tj Storage Temperature Tstg Note : 1. Pulse test, pulse width≤300μs, duty≤2% 2.
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