MTEH0N20L3 Datasheet PDF (N-Channel Enhancement Mode Power MOSFET)

MTEH0N20L3 - N-Channel Enhancement Mode Power MOSFET

Features

Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=10V, ID=0.5A RDSON@VGS=5V, ID=0.1A 200V 1A 0.98Ω (typ) 0.97Ω (typ) Symbol MTEH0N20L3 Outline SOT-223 G：Gate S：Source D：Drain D S D G Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Pul.

Datasheet Details

Part number	MTEH0N20L3
Manufacturer	CYStech
File Size	246.72 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTEH0N20L3 Datasheet

📁 Similar Datasheet

MTE010N10E3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTE010N10F3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTE010N10FP - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTE011N10RE3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTE011N10RFP - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTE011N10RH8 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTE011N10RJ3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTE013N08E3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTE013N08H8 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTE013N10RJ3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

Full PDF Text Transcription

Click to expand full text

CYStech Electronics Corp. Spec. No. : C882L3 Issued Date : 2012.11.16 Revised Date : 2012.12.19 Page No. : 1/8 N-Channel Enhancement Mode MOSFET MTEH0N20L3 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=10V, ID=0.5A RDSON@VGS=5V, ID=0.1A 200V 1A 0.98Ω (typ) 0.

Published: Apr 27, 2016 |