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MTN2302N3 - N-Channel Enhancement Mode MOSFET

Key Features

  • VDS=20V RDS(ON)=65mΩ@VGS=4.5V, IDS=3.6A RDS(ON)=95mΩ@VGS=2.5V, IDS=3.1A.
  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Excellent thermal and electrical capabilities.
  • Compact and low profile SOT-23 package Equivalent Circuit MTN2302N3 Outline SOT-23 D G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Curre.

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Datasheet Details

Part number MTN2302N3
Manufacturer CYStech
File Size 208.40 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2302N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2302N3 Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page No. : 1/5 .. Features • VDS=20V RDS(ON)=65mΩ@VGS=4.5V, IDS=3.6A RDS(ON)=95mΩ@VGS=2.5V, IDS=3.1A • Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package Equivalent Circuit MTN2302N3 Outline SOT-23 D G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Ta=25℃ Ta=75℃ Symbol VDS VGS ID IDM PD Tj Tstg MTN2302N3 GS Limits 20 ±8 2.