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MTN2302S3 - N-Channel Enhancement Mode MOSFET

Key Features

  • Simple drive requirement.
  • Small package outline.
  • Capable of 2.5V gate drive.
  • Pb-free lead plating and halogen-free package Symbol MTN2302S3 Outline SOT-323 D G：Gate S：Source D：Drain GS Ordering Information Device MTN2302S3-0-T1-G Package Shipping SOT-323 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1.

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Datasheet Details

Part number MTN2302S3
Manufacturer CYStech
File Size 366.86 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2302S3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C323S3 Issued Date : 2015.05.29 Revised Date : Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN2302S3 BVDSS ID@VGS=10V, TA=25°C RDSON(MAX)@VGS=4.5V, ID=3.6A RDSON(MAX)@VGS=2.5V, ID=3.1A 20V 2.9A 55mΩ(typ.) 65mΩ(typ.) Features • Simple drive requirement • Small package outline • Capable of 2.