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MTN2310AV8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and halogen-free package 60V 14A 6A 29mΩ 33mΩ Equivalent Circuit MTN2310AV8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device MTN2310AV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant product.

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Datasheet Details

Part number MTN2310AV8
Manufacturer CYStech
File Size 356.70 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN2310AV8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C393V8 Issued Date : 2016.01.04 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTN2310AV8 BVDSS ID @ TC=25°C, VGS=10V ID @ TA=25°C, VGS=10V RDSON(TYP) VGS=10V, ID=3A VGS=4.