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MTN2310N3 - N-Channel Enhancement Mode MOSFET

Key Features

  • VDS=60V RDS(ON)=90mΩ(max. )@VGS=10V, IDS=3A RDS(ON)=120mΩ(max. )@VGS=4.5V, IDS=2A.
  • Simple drive requirement.
  • Small package outline Symbol MTN2310N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating.

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Datasheet Details

Part number MTN2310N3
Manufacturer CYStech
File Size 469.60 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2310N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 60V N-CHANNEL Enhancement Mode MOSFET MTN2310N3 Spec. No. : C393N3 Issued Date : 2007.10.24 Revised Date : Page No. : 1/6 Features • VDS=60V RDS(ON)=90mΩ(max.)@VGS=10V, IDS=3A RDS(ON)=120mΩ(max.)@VGS=4.5V, IDS=2A • Simple drive requirement • Small package outline Symbol MTN2310N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Operating Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD Tj Tstg Limits 60 ±20 3.0 2.3 10 1.38 0.01 -55~+150 -55~+150 Note : 1.